%0 Journal Article
%T Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness<br>表面InGaN厚度对GaN基发光二极管特性的影响
%A Gu Xiao-Ling
%A Guo Xia
%A Wu Di
%A Li Yi-Bo
%A Shen Guang-Di
%A <br>顾晓玲
%A 郭霞
%A 吴迪
%A 李一博
%A 沈光地
%J 物理学报
%D 2008
%I 
%X GaN-based light emitting diodes (LEDs) with InGaN as the capping layer was designed in our experiment. The forward voltage at the typical driving current of 20mA was obviously changed by adjusting the thickness of the InGaN layer. We were concerned with the effect of polarization and solved the concentration and the tunneling probability of the two dimensional hole in the triangular potential well at the surface InGaN/GaN interface and obtained the minimal forward voltage. The calculation results were consistent with the experimental data.
%K polarization
%K two dimension hole concentration
%K tunneling probability<br>极化，
%K 二维空穴气，
%K 隧穿概率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F3274748FF138325FF16157C5E7C2AC6&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=0B39A22176CE99FB&sid=82A2BA02DFB40363&eid=7C786AA9670CF26C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12