%0 Journal Article
%T Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands<br>In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性
%A Shang Li-Yan
%A Lin Tie
%A Zhou Wen-Zheng
%A Huang Zhi-Ming
%A Li Dong-Lin
%A Gao Hong-Ling
%A Cui Li-Jie
%A Zeng Yi-Ping
%A Guo Shao-Ling
%A Chu Jun-Hao
%A <br>商丽燕
%A 林 铁
%A 周文政
%A 黄志明
%A 李东临
%A 高宏玲
%A 崔利杰
%A 曾一平
%A 郭少令
%A 褚君浩
%J 物理学报
%D 2008
%I 
%X Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53Ga0.47As/In0.52Al0.48As quantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.
%K two-dimensional electron gas
%K scattering time
%K self-consistent calculation<br>二维电子气，
%K 散射时间，
%K 自洽计算
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B222B49D0580C7B89AD0103195E90D88&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=E158A972A605785F&sid=C9E61AB37F867E3C&eid=BD645585791E8E29&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14