%0 Journal Article
%T Analytic tunneling-current model of small-scale MOSFETs<br>小尺寸MOSFET隧穿电流解析
%A Chen Wei-Bing
%A Xu Jing-Ping
%A Zou Xiao
%A Li Yan-Ping
%A Xu Sheng-Guo
%A Hu Zhi-Fu
%A <br>陈卫兵
%A 徐静平
%A 邹晓
%A 李艳萍
%A 许胜国
%A 胡致富
%J 物理学报
%D 2006
%I 
%X An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with the results of self-consistent solution and experimental data, but take much shorter computing time than the self-consistent solution method. This indicates that the model can be used for analysis of gate-leakage properties of MOS devices with not only SiO2 but also high-k materials as gate dielectric and high-k gate dielectric stack structures, and circuit simulation of MOS devices.
%K MOSFET<br>隧穿电流
%K 量子机理
%K 解析模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=EA8808F905764212&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=F3090AE9B60B7ED1&sid=4FC6D3978A9666A6&eid=FB5C7A21DCADBAB4&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15