%0 Journal Article
%T The effect of the inserted AlGaAs films on the behaviors of InAs quantum dot detector<br>插入生长AlGaAs薄膜对InAs量子点探测器性能的影响
%A Wang Chong
%A Liu Zhao-Lin
%A Li Tian-Xin
%A Chen Ping-Ping
%A Cui Hao-Yang
%A Xiao Jun
%A Zhang Shu
%A Yang Yu
%A Lu Wei
%A <br>王茺
%A 刘昭麟
%A 李天信
%A 陈平平
%A 崔昊杨
%A 肖军
%A 张曙
%A 杨宇
%A 陆卫
%J 物理学报
%D 2008
%I 
%X Two InAs quantum dot samples have been grown by the solid source molecular beam epitaxy (MBE) and fabricated to detectors. AlGaAs thin films have been inserted into the source region for one of the two devices. The structural features of the two samples have been studied by using the transmission electron microscope (TEM). The photoelectric properties of them have been measured by the photoluminescence (PL) and photocurrent (PC) spectra. The experimental results indicated that the AlGaAs films have profound effects on the properties of the detector. According to the calculations based on effective mass approximation, the origins of the photocurrent peaks of the two devices have been identified.
%K InAs quantum dots
%K AlGaAs films
%K photoluminescence
%K effective mass approximation<br>InAs
%K 量子点
%K AlGaAs薄膜
%K 光致发光光谱
%K 有效质量近似模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=46591AA967CF5ED2C621C4D55268CFBF&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=0B39A22176CE99FB&sid=EF10DC5E94EFF05A&eid=7C112B12217D9FAF&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20