%0 Journal Article
%T Fabrication of ZnO nanowire-based diodes and their light-emitting properties<br>ZnO纳米线二极管发光器件制备及特性研究
%A Wang Yan-Xin
%A Zhang Qi-Feng
%A Sun Hui
%A Chang Yan-Ling
%A Wu Jin-Lei
%A <br>王艳新
%A 张琦锋
%A 孙晖
%A 常艳玲
%A 吴锦雷
%J 物理学报
%D 2008
%I 
%X A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392nm, and the other at the visible 525nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.
%K ZnO nanowire
%K Schottky type diode
%K electroluminescence<br>ZnO纳米线，
%K 肖特基二极管，
%K 电致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CDCDCCE55F4A8E6FE3CC4BB8207E3681&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=0B39A22176CE99FB&sid=39B73ADA6F3DD05F&eid=EEBB803F60D7DC4B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17