%0 Journal Article
%T Molecular dynamics studies on vacancy-interstitial annihilation in silicon
硅晶体中点缺陷结合过程的分子动力学研究
%A Qiao Yong-Hong
%A Wang Shao-Qing
%A
乔永红
%A 王绍青
%J 物理学报
%D 2005
%I
%X Molecular dynamics (MD) simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon. We choose the Stillinger-Weber potential , which is commonly used for silicon, to describe the interaction between atoms. The system is relaxed under 300K and 1400K respectively. We have found that <111 > is the preferred recombination direction and propose the presence of an energy barrier in the <110>direction. From the calculated value of energy barrier alon g <110> we give a reasonable explanation for the difference between Tang's and Z awadzki's data.
%K molecular dynamics
%K vacancy and interstitial
%K diffusion
分子动力学,空位与间隙原子,扩散
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1449FC67E5C6E2A7&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=F3090AE9B60B7ED1&sid=76495C5AD8EDB77D&eid=8476343CBBFC34F8&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=19