%0 Journal Article
%T Studies on electrical properties of delta-doping p-GaN films<br>Delta掺杂制备p-GaN薄膜及其电性能研究
%A Li Tong
%A Wang Huai-Bing
%A Liu Jian-Ping
%A Niu Nan-Hui
%A Zhang Nian-Guo
%A Xing Yan-Hui
%A Han Jun
%A Liu Ying
%A Gao Guo
%A Shen Guang-Di
%A <br>李 彤
%A 王怀兵
%A 刘建平
%A 牛南辉
%A 张念国
%A 邢艳辉
%A 韩 军
%A 刘 莹
%A 高 国
%A 沈光地
%J 物理学报
%D 2007
%I 
%X Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delta-doping. It is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the carrier concentration was decreased by the pre-purge.
%K LEDs
%K MOCVD<br>氮化镓
%K Delta掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2DEB27B264537E25&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=0B39A22176CE99FB&sid=E1D875FA50925809&eid=FC27EB98080C89E6&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=16