%0 Journal Article
%T Effect of dry etching on light emission of InAsP/InP SMQWs<br>干法刻蚀影响应变量子阱发光的机理研究
%A Cao Meng
%A Wu Hui-Zhen
%A Liu Cheng
%A Lao Yan-Feng
%A Huang Zhan-Chao
%A Xie Zheng-Sheng
%A Zhang Jun
%A Jiang Shan
%A <br>曹萌
%A 吴惠桢
%A 刘成
%A 劳燕锋
%A 黄占超
%A 谢正生
%A 张军
%A 江山
%J 物理学报
%D 2007
%I 
%X The cap layers of InAsP/InP SMQWs and InAsP/InGaAsP strained single quantum wells (SSQW) are etched to different depths using ICP. The PL intensity of the quantum wells is enhanced by different degrees after dry etching. The quantum well surface becomes rough and the microstructure inside the quantum well is changed during dry etching. The influence of surface roughness to the photoluminescence of quantum well is eliminated by selectively wet etching the InP cap layer of the SSQW. It is attained that after the cap layer is dry etched off about 20 nm the PL intensity of SSQW is enhanced about 1.8 and 1.2 times due to the change in microstructure and the roughening of surface, respectively.
%K dry etching
%K strained multiple quantum wells
%K PL spectra
%K damage<br>干法刻蚀
%K 应变多量子阱
%K 光致发光谱
%K 损伤
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5023922899256BF0&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=0B39A22176CE99FB&sid=4E3F821C82005C21&eid=D7513DBF373F2B6C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17