%0 Journal Article
%T Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors<br>ZnO纳米线场效应管的制备及I-V特性研究
%A Zhang Wei
%A Li Meng-Ke
%A Wei Qiang
%A Cao Lu
%A Yang Zhi
%A Qiao Shuang_Shuang
%A <br>张 威
%A 李梦轲
%A 魏 强
%A 曹 璐
%A 杨 志
%A 乔双双
%J 物理学报
%D 2008
%I 
%X The ZnO nanowire-based insulation gate field effect transistors were fabricated by connecting single ZnO nanowires across three kinds of symmetrical metal trenches (Au, Zn and Al thin films) with different widths. In the testing processes, the traditional ion beam eroding technology, electronic probe, and atom force microscopy probe methods were employed. The I-V characteristics of various synthesized ZnO nanowire-based devices were researched. The results showed that the main effecting factor on the I-V characteristic is the type of contact between the ZnO nanowire and the surface of different trenches, which may be of the Ohmic or the Schottky contact type in different cases. Finally, the I-V characteristics of the fabricated devices had been discussed by using the electron transport mechanism.
%K ZnO nanowires
%K field effect transistor
%K I-V characteristic<br>ZnO纳米线，
%K 场效应管，
%K I-V特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4C0DE015D726CA88028EE17D506C8386&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=9CF7A0430CBB2DFD&sid=BCA69CA65DD73E09&eid=2BBB62B119DAAFA1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0