%0 Journal Article
%T Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal<br>感应耦合等离子体刻蚀InP/InGaAsP二维光子晶体结构的研究
%A Ma Xiao-Tao
%A Zheng Wan-Hua
%A Ren Gang
%A Fan Zhong-Chao
%A Chen Liang-Hui
%A <br>马小涛
%A 郑婉华
%A 任刚
%A 樊中朝
%A 陈良惠
%J 物理学报
%D 2007
%I 
%X Inductively coupled plasma (ICP) etching of InP in Cl2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90° side-wall is achieved at low DC bias after optimization of the gas mixture.
%K InP/InGaAsP
%K Cl2/BCl3<br>光子晶体
%K 感应耦合等离子体
%K 低偏压刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=85BB87FA17AB123F&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=0B39A22176CE99FB&sid=1BE4748776BF02C4&eid=90C2E72D2E105FF5&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=16