%0 Journal Article
%T Influence of wet etching on the morphologies of Si patterned substrates and ZnO epilayers<br>湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响
%A Cui Xiu-Zhi
%A Zhang Tian-Chong
%A Mei Zeng-Xi
%A Liu Zhang-Long
%A Liu Yao-Ping
%A Guo Yang
%A Su Xi-Yu
%A Xue Qi-Kun
%A Du Xiao-Long
%A <br>崔秀芝
%A 张天冲
%A 梅增霞
%A 刘章龙
%A 刘尧平
%A 郭阳
%A 苏希玉
%A 薛其坤
%A 杜小龙
%J 物理学报
%D 2009
%I 
%X A ZnO film with two-dimensional periodic structure was grown on Si substrate by radio-frequency plasma-assisted molecular beam epitaxy. The influence of wet-chemical etching on Si (100) and Si (111) substrates patterned with dot arrays was investigated for achieving a ZnO film with good periodic structure. X-ray diffraction and scanning electron microscopy mesurements demonstrate better crystalline quality and surface morphology of ZnO film grown on Si (111) than that on Si (100). The results suggest that the growth method is feasible for the fabrication of ZnO film with good periodic structure.
%K ZnO
%K molecular beam epitaxy
%K silicon
%K wet etching<br>ZnO，
%K 分子束外延，
%K Si，
%K 湿法刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A4A0F8FE3FFD4593139D14866A5173F3&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=CA4FD0336C81A37A&sid=F637763636425CAF&eid=AA5FB09E1F81059E&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12