%0 Journal Article
%T Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristor<br>门极换流晶闸管透明阳极的机理与特性分析
%A Wang Cai-Lin
%A Gao Yong
%A Ma Li
%A Zhang Chang-Li
%A Kim Eundong
%A Kim Sangcheol
%A <br>王彩琳
%A 高 勇
%A 马 丽
%A 张昌利
%A 金垠东
%A 金相喆
%J 物理学报
%D 2005
%I 
%X The mechanism of the transparent anode in gate commutated thyristors (GCT) was i nvestigated by analyzing its current transportation theoretically, and the expre ssion of the electron current density at the transparent anode is deduced. The s imulation result of the CCT's switching characteristic validates the correctnes s of the mechanism analysis for the transparent anode. In addition, the characte ristic of the transparent anode in GCT devices was analyzed by compared with gen eral anode in GTO devices. The results show that the transparent anode can impro ve effectively the switching characteristic and reduce the switching loss, and t he transparent anode with an additional n buffer layer used in GCT can make the trade off among the on-state characteristic,blocking characteristic and switchin g characteristics,and improve further the characteristics of GCT.The conclusions are validated by the experiment results.
%K transparent anode
%K power semiconductor devices
%K gate commutated thyristor
%K injec tion efficiency<br>透明阳极，
%K 电力半导体器件，
%K 门极换流晶闸管，
%K 注入效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=08984947CA571764&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=94C357A881DFC066&sid=44F41EAA25AF5306&eid=6E66AAEF44D63139&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12