%0 Journal Article
%T AMPS modeling of light J-V characteristics of a-Si based solar cells<br>非晶硅太阳电池光照J-V特性的AMPS模拟
%A Hu Zhi-Hu
%A Liao Xian-Bo
%A Diao Hong-Wei
%A Xia Chao-Feng
%A Xu Ling
%A Zeng Xiang-Bo
%A Hao Hui-Ying
%A Kong Guang-Lin
%A <br>胡志华
%A 廖显伯
%A 刁宏伟
%A 夏朝凤
%A 许 玲
%A 曾湘波
%A 郝会颖
%A 孔光临
%J 物理学报
%D 2005
%I 
%X AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University,has been used to module the light J_V c haracteristics of a_Si solar cells with a structure of TCO/p_a_SiC:H/i_a_Si:H/n_ a_Si:H/metal.The effects of valence band offset and contact barriers at p/i and TOC/p,n/metal interfaces on the light J_V characteristics have been examined .The modeling has qualitatively categorized and explained the non_ideal J_V behaviors (rollover,crossover,Voc shift,and rollunder) observed in a_Si based so lar cells.
%K amorphous silicon
%K solar cell
%K computer simulation<br>非晶硅，
%K 太阳电池，
%K 计算机模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2F1DCF1D19C1425A&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=94C357A881DFC066&sid=F52B110B2A5AC292&eid=62430EC5AE2C2006&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=13