%0 Journal Article
%T Formation mechanism of interface charges in the metal-semiconductor superlattices<br>金属-半导体超晶格中界面电荷的生成机理
%A Li Shu-Ping
%A Wang Ren-Zhi
%A <br>李书平
%A 王仁智
%J 物理学报
%D 2004
%I 
%X The formation mechanism of the interface charge Q ss at the metal semiconductor interface in the (Si 2) 3(2Al) 6(001), (Ge 2) 3(2Al) 6(001),(Ge 2) 3(2Au) 6(001) and (Ge 2) 3(2Ag) 6(001) superlattices has been investigated by the LMTO ASA energy band calculation method. The results show that the origin of interface charge Q ss is the rearrangement of valence electrons in the metal and semiconductor atomic layers at the metal semiconductor interface. The formation mechanism of the interface charge Q ss in this paper is similar to that of Tung's model of the polarization of the chemical bonds at metal semiconductor interfaces. Both of them can account for the origin of interface charge Q ss even at the monocrystalline metal semiconductor interfaces.
%K Schottky barrier
%K interface charge<br>Schottky势垒，
%K 界面电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=73942CF48552C6B4&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=9CF7A0430CBB2DFD&sid=56A3022B10AFB00E&eid=64370E3B99885BD9&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=13