%0 Journal Article
%T Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure<br>应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究
%A Wang Chong
%A Liu Zhao-Lin
%A Chen Ping-Ping
%A Cui Hao-Yang
%A Xia Chang-Sheng
%A Yang Yu
%A Lu Wei
%A <br>王 茺
%A 刘昭麟
%A 陈平平
%A 崔昊杨
%A 夏长生
%A 杨 宇
%A 陆 卫
%J 物理学报
%D 2007
%I 
%X Two InAs/In0.15Ga0.85As quantum dots-in-a-well (DWELL) samples have been grown by solid source molecular beam epitaxy (MBE). The increased size of InAs dots and more homogeneous dot-size distribution have been found in one InAs DWELL sample with growth optimized by changing both the growth temperature and the thickness in In0.15Ga0.85As well layers. The improved optical properties of this sample have also been confirmed by photoluminescence (PL) and piezomodulated reflectance (PzR) spectra. The numerical calculations based on effective mass approximation indicate that the increase of dot size and the improved optical properties are dominantly due to the strain driven alloy decomposition of In0.15Ga0.85As well layers.
%K alloy decomposition effect
%K InAs/In0
%K 15Ga0
%K 85As DWELL
%K photolumine scence spectroscopy
%K piezomodulated reflectance spectroscopy<br>合金分解效应
%K InAs/In0.15Ga0.85As量子点
%K 光致发光光谱
%K 压电调制光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F27FF996000DF4A0&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=9CF7A0430CBB2DFD&sid=A46AAD20CA483EE3&eid=4A328DD007498E23&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18