%0 Journal Article
%T Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs<br>AlGaN表面坑状缺陷及GaN缓冲层位错缺陷对AlGaN/GaN HEMT电流崩塌效应的影响
%A Xi Guang-Yi
%A Ren Fan
%A Hao Zhi-Biao
%A Wang Lai
%A Li Hong-Tao
%A Jiang Yang
%A Zhao Wei
%A Han Yan-Jun
%A Luo Yi
%A <br>席光义
%A 任 凡
%A 郝智彪
%A 汪 莱
%A 李洪涛
%A 江 洋
%A 赵 维
%A 韩彦军
%A 罗 毅
%J 物理学报
%D 2008
%I 
%X The influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on the current collapse of MOVPE-grown AlGaN/GaN high electron mobility transistors (HEMTs) is studied in this paper. Pulsed gate voltage measurements show that the surface pit defects result in gate lag current collapse and increased of source/drain resistance. And the more pit defects exist, the more obvious current collapse and increased source/drain resistance are observed. Pulsed drain voltage measurements show that the drain lag current collapse, which is almost unaffected by the surface pit defects, can be associated with the dislocation defects in GaN buffer layer. Our experimental results indicate that pit defects on AlGaN surface and dislocation defects in GaN buffer layer can be one of the origins of gate lag and drain lag current collapse, respectively.
%K AlGaN/GaN HEMT<br>电流崩塌
%K 坑状缺陷
%K 位错缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=C9D18FD65BAE96D0235A5BD2C6875D53&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=708DD6B15D2464E8&sid=B6ABA36A7BFC9BA3&eid=22E3D82093EA980E&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0