%0 Journal Article
%T Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory<br>氮掺杂Ge2Sb2Te5相变存储器的多态存储功能
%A Lai Yun-Feng
%A Feng Jie
%A Qiao Bao-Wei
%A Ling Yun
%A Lin Yin-Yin
%A Tang Ting-Ao
%A Cai Bing-Chu
%A Chen Bang-Ming
%A <br>赖云锋
%A 冯 洁
%A 乔保卫
%A 凌 云
%A 林殷茵
%A 汤庭鳌
%A 蔡炳初
%A 陈邦明
%J 物理学报
%D 2006
%I 
%X Nitrogen-doped Ge2Sb2Te5 (N-GST) film for phase change memory was prepared by reactive sputtering. Testing results show that doped nitrogen combines with Ge to form GeN, which not only restrains crystal grain growth but also increases the crystallization temperature and phase transformation temperature of Ge2Sb2Te5 (GST). Phase change memory (PCM) with N-GST can realize three-state storage in one PCM cell by using the resistivity difference between the amorphous state, the face centered cubic phase and the hexagonal phase of GST.
%K phase change memory
%K multiple-state storage
%K nitrogen doping
%K Ge2Sb2Te5<br>相变存储器，
%K 多态存储，
%K N掺杂，
%K Ge2Sb2Te5
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9E20AC3DFEB3A556&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=5D311CA918CA9A03&sid=BD799A26D4E1A2C4&eid=DD415B552A1B6102&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18