%0 Journal Article
%T Electron spin relaxation and momentum relaxation in semiconductor quantum wells<br>半导体量子阱中电子自旋弛豫和动量弛豫
%A Wu Yu
%A Jiao Zhong-Xing
%A Lei Liang
%A Wen Jin-Hui
%A Lai Tian-Shu
%A Lin Wei-Zhu
%A <br>吴羽
%A 焦中兴
%A 雷亮
%A 文锦辉
%A 赖天树
%A 林位株
%J 物理学报
%D 2006
%I 
%X The dependence of electron spin relaxation on the momentum relaxation and carrier density are investigated based on the spin-orbit coupling and D'yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps with the carrier density increases from 1×1017 to 1×1018cm-3, consistent with the theoretical prediction. This results reveals that with the increase of the carrier density, the spin-orbit interaction reduces due to more frequent momentum scattering, sothat the spin relaxation time prolongs.
%K spin-orbit coupling
%K electron spin relaxation and momentum relaxtion
%K femtosecond spectroscopy<br>电子自旋轨道耦合
%K 电子自旋弛豫和动量弛豫
%K 飞秒光谱技术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5D3B09AF387ADC0D&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=B31275AF3241DB2D&sid=5AD22DF6AAE82463&eid=897A85F252A85EF6&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=16