%0 Journal Article
%T Micro-Raman scattering study of hexagonal InGaN epitaxial layer<br>六方相InGaN外延膜的显微Raman散射
%A Wang Rui-Min
%A Chen Guang-De
%A Zhu You-Zhang
%A <br>王瑞敏
%A 陈光德
%A 竹有章
%J 物理学报
%D 2006
%I 
%X Hexagonal InxGa1-xN film grown by metalorganic chemical vapor deposition (MOCVD) was studied by Micro-Raman scattering and X-ray diffraction. The phase separation was observed in InxGa1-xN, the biaxial stress was measured by both Raman and X-ray diffraction. In Raman spectroscopy, the A1(LO) mode of InxGa1-xN is absent. Instead, the LO phonon-plasmon coupled mode (LPP+) was observed at about 778 cm-1. The carrier concentration was determined by the frequency of the coupled mode. The E2 and A1(TO)modes of InxGa1-xN layer exhibit a down-shift compare to those of GaN layer. At low temperature, the peak induced by electronic transition was observed in Raman spectra of InxGa1-xN.
%K Raman scattering
%K X-ray diffraction
%K phase separation
%K stress
%K LO phonon-plasmon coupled mode<br>Raman散射
%K X射线衍射
%K 相分离
%K 应力
%K LO声子-等离子耦合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=13BD9DDFC6353C59&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=0B39A22176CE99FB&sid=FE68044BBD4BDA5F&eid=46DFDABDAA819280&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=28