%0 Journal Article
%T Characteristics of CdTe solar cell device<br>CdTe/CdS太阳电池I-V，C-V特性研究
%A Yang Xue-Wen
%A Zheng Jia-Gui
%A Zhang Jing-Quan
%A Feng Liang-Huan
%A Cai Wei
%A Cai Ya-Ping
%A Li Wei
%A Li Bing
%A Lei Zhi
%A Wu Li-Li
%A <br>杨学文
%A 郑家贵
%A 张静全
%A 冯良桓
%A 蔡 伟
%A 蔡亚平
%A 李 卫
%A 黎 兵
%A 雷 智
%A 武莉莉
%J 物理学报
%D 2006
%I 
%X For increasing the efficiency of CdTe/CdS solar cells, it is important to measure the current-voltage and capacitance-voltage characteristics and then carry out a numerical simulation based on electronic measurement of CdTe and CdS thin films. In this paper, the capacitance-voltage characteristics were measured in the frequency range from 50kHz to 1MHz. The carrier concentrations of the absorber layer and the space charge region width were calculated. The dark current-voltage characteristics of the CdTe solar cell were measured in the temperature range from 220K to 300K. The saturated reverse dark current density J0 and the diode ideal factor A of the solar cells were obtained. The relations of J0 and A with temperature were discussed. The results show that the capacitance-voltage curves has two peaks and the intensities and positions of the peaks are dependent on measurement frequency. The results are simulated and explained with the multi-junction model. With decreasing temperature, the saturated reverse dark current decreases from 10-6mAcm-2 at room temperature to 10-7mAcm-2 at 220K, and the diode ideal factor rises from 2.13 at room temperature to 9.95 at 220K.
%K CdTe solar cell
%K I-V characteristic
%K C-V characteristic<br>CdTe太阳电池
%K 电流-电压特性
%K 电容-电压特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=11AFDE028AC62D6D&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=94C357A881DFC066&sid=98AE30D9200AD42B&eid=87A4D5C6B6E026A9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10