%0 Journal Article
%T Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering<br>微波ECR等离子体增强磁控溅射制备SiNx薄膜及其性能分析
%A Ding Wan-Yu
%A Xu Jun
%A Li Yan-Qin
%A Piao Yong
%A Gao Peng
%A Dong Chuang
%A <br>丁万昱
%A 徐 军
%A 李艳琴
%A 朴 勇
%A 高 鹏
%A 邓新绿
%A 董 闯
%J 物理学报
%D 2006
%I 
%X Hydrogen-free silicon nitride films were deposited at room temperature by microw ave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetr on sputtering system. Fourier-transform infrared spectroscopy and X-ray photoele ctron spectroscopy were used to study the bond type, the change of bond structur es, and the stoichiometry of the silicon nitride films. Atomic-force microscopy and nano-indentation were used to study the morphological features and mechanica l characteristics of the films. The results indicate that the structure and char acteristics of the films deposited by this technique depend strongly on the dens ity of sputtered Si in plasma and the films deposited at 4 sccm N2 fl ow show excellent stoichiometry and properties.
%K SiNx<br>磁控溅射
%K 傅里叶变换红外吸收光谱
%K X射线电子谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CF8B0146F3A89B9C&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=38B194292C032A66&sid=196264D95F295743&eid=5A64531D29896B77&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=24