%0 Journal Article
%T Realization and output characteristics analysis of the multiple islands single- electron transistors<br>多岛单电子晶体管的实现及其源漏特性分析
%A 郭荣辉
%A 赵正平
%A 郝 跃
%A 刘玉贵
%A 武一宾
%A 吕 苗
%J 物理学报
%D 2005
%I 
%X In this paper, a new kind of multiple islands single-electron transistor is prepared successfully with indium quantum dots deposited among nanometer-gap electrodes. The output characteristics are tested and the Coulomb blockade effects are observed. As a result, the harmful co-tunneling effects occurring usually in the single island single-electron transistors are weakened significantly, and a big threshold voltage is got. At the end of the paper, the different transport states from source to drain are discussed.
%K single-electron transistors
%K quantum dots
%K Coulomb blockade<br>单电子晶体管，
%K 量子点，
%K 库仑阻塞
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=642EC5A549F11793&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=E158A972A605785F&sid=64C4335F00120D16&eid=F3258B10DFC889AC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10