%0 Journal Article
%T Photoluminescence of GaAs(110) quantum wells modulated by surface acoustic waves<br>声表面波对GaAs(110)量子阱发光特性的调制
%A Yang Guang
%A P V Santos
%A <br>杨 光
%A P. V. Santos
%J 物理学报
%D 2006
%I 
%X We studied the low temperature (15K) photoluminescence properties of un-doped GaAs(110) quantum wells modulated by surface acoustic waves (SAW) by photoluminescence (PL) spectroscopy technique. Under the influence of the SAW, the decreasing of PL intensity and the splitting of the PL lines were observed. The magnitude of the splitting can be up to 10meV when the power applied to the transducers is 20dBm. Furthermore, the spin injection in GaAs(110) quantum wells generated by circular polarization light under the influence of SAW was also discussed.
%K photoluminescence
%K GaAs quantum wells
%K surface acoustic waves
%K spin polarization<br>发光
%K GaAs量子阱
%K 声表面波
%K 自旋极化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=C19FA0523939619B&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=5D311CA918CA9A03&sid=37555484F4C050F2&eid=6968114F4FC0F855&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15