%0 Journal Article
%T Structural characteristics of HfO2 films grown by e-beam evaporation<br>电子束蒸发制备HfO2高k薄膜的结构特性
%A Yan Zhi-Jun
%A Wang Yin-Yue
%A Xu Run
%A Jiang Zui-Min
%A <br>阎志军
%A 王印月
%A 徐 闰
%A 蒋最敏
%J 物理学报
%D 2004
%I 
%X High k dielectric HfO2 films were deposited on p-type Si(100) substrates by e-beam evaporation. The composition of the films is determined to be stoichiometric. The structure changes from almost amorphous to polycrystalline after annealing. The films have very flat surface(rms roughness less than 0.3nm) and no voids appear even after high-temperature annealing, indicating a good thermal stability. The refractive index of HfO2 film is 2.09 (at 600?nm). The dielectric constant is 19. All the characteristics show that e-beam evaporation is a good method to deposit HfO2 thin films as dielectric.
%K high k dielectric film
%K HfO2
%K ebeam evaporation<br>高k薄膜
%K HfO2
%K 电子束蒸发
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=6BCD029AC8147D18&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=5D311CA918CA9A03&sid=316AB18210990281&eid=CE830ADE2AFE8344&journal_id=1000-3290&journal_name=物理学报&referenced_num=7&reference_num=10