%0 Journal Article
%T The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas<br>Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应
%A Zhu Bo
%A Gui Yong-Sheng
%A Zhou Wen-Zheng
%A Shang Li-Yan
%A Guo Shao-Ling
%A Chu Jun-Hao
%A Lü Jie
%A Tang Ning
%A Shen Bo
%A Zhang Fu-Jia
%A <br>朱博
%A 桂永胜
%A 周文政
%A 商丽燕
%A 郭少令
%A 褚君浩
%A 吕捷
%A 唐宁
%A 沈波
%A 张福甲
%J 物理学报
%D 2006
%I 
%X The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22Ga0.78N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.
%K two-dimensional electron gas
%K weak localization
%K magnetoresistance<br>二维电子气
%K 弱局域
%K 磁阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1E43F63F71CE321B&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=94C357A881DFC066&sid=A1B2DB191856EB2D&eid=B2AD9650C7AE1439&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=25