%0 Journal Article
%T Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure<br>金属诱导单一方向横向晶化薄膜晶体管以及栅控型轻掺杂漏极结构的研究
%A Meng Zhi-Guo
%A Wu Chun-Y
%A Li Juan
%A Xiong Shao-Zhen
%A Kwok Hoi S
%A Man Wong
%A <br>孟志国
%A 吴春亚
%A 李 娟
%A 熊绍珍
%A 郭海成
%A 王 文
%J 物理学报
%D 2005
%I 
%X In this paper the low-temperature metal-induced unilaterally crystallized (MIUC ) polycrystalline silicon thin-film transistors (TFTs) have been developed and c haracterized. These TFTs have higher field-effect mobility, lower off-state curr ent and better spatial uniformity. A new structure of gate-modulated lightly dop ed drain of TFT was proposed. It is very effective to lower gate-induced drain-l eakage current of the TFTs when a higher source drain voltage is applied to it. This type MIUC TFT is suitable to fabricate active matrices for liquid crystal and organic light-emitting diode flat-panel displays on large area glass substr ates.
%K metal-induced unilaterally crystallization
%K polycrystalline silicon thin-film t ransistors
%K gate-modulated lightly doped source drain<br>金属单向诱导横向晶化，
%K 多晶硅薄膜晶体管，
%K 新型栅控轻掺杂漏区结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=23856F85798071EA&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=DF92D298D3FF1E6E&sid=0416194637EA3473&eid=071C888203E532B6&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=12