%0 Journal Article
%T Degradation and physical mechanism of NBT in deep submicron PMOSFET''''s<br>NBT导致的深亚微米PMOS器件退化与物理机理
%A Liu Hong Xi
%A Zheng Xue Feng
%A Hao Yue
%A <br>刘红侠
%A 郑雪峰
%A 郝　跃
%J 物理学报
%D 2005
%I 
%X This paper investigates the dependence of current and voltage characterizations on stress time in deep submicron PMOSFET's before and after negative bias temperature (NBT) stress, we mainly focus on the threshold voltage shift under NBT stress. It is experimentally demonstrated that the electrochemical reactions at the interface between gate oxide and substrate and the diffusion of hydrogen related species in the oxide are the major causes of the NBT in PMOSFET's. PMOSFET degradation caused by NBT depends on the balance of reaction limited and diffusion limited mechanisms.
%K deep submicron PMOSFET's
%K negative bias temperature instability
%K interface states
%K positive fixed oxide charges<br>深亚微米PMOS器件，
%K 负偏压温度不稳定性，
%K 界面态，
%K 氧化层固定正电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=92AE15CFCED992B6&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=38B194292C032A66&sid=A126866E01788114&eid=CB8F7B3BEDA8D32B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10