%0 Journal Article
%T Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon<br>二次离子质谱深度剖面分析氢化微晶硅薄膜中的氧污染
%A Zhang Xiao-Dan
%A Zhao Ying
%A Zhu Feng
%A Wei Chang-Chun
%A Mai Yao-Hu
%A Gao Yan-Tao
%A Sun Jian
%A Geng Xin-Hua
%A Xiong Shao-Zhen
%A <br>张晓丹
%A 赵 颖
%A 朱 锋
%A 魏长春
%A 麦耀华
%A 高艳涛
%A 孙 建
%A 耿新华
%A 熊绍珍
%J 物理学报
%D 2005
%I 
%X Oxygen contamination of samples fabricated by very high_frequency plasma_enhanced chemical vapor deposition with the variation of silane concentration and disc harge power was studied by secondary ion mass spectroscopy. The results showed t hat oxygen content in the samples depended strongly on the silane concentration and discharge power. Microcrystalline silicon thin films with higher crystallin e volume fraction has relatively higher oxygen content. Oxygen contamination of samples was also related with the background vacuum, especially for microcrystal line silicon thin films. Therefore, higher background vacuum is extremely necess ary in the fabrication of high-quality microcrystalline silicon thin films.
%K very high frequency plasma_enhanced chemical vapor deposition
%K second ion mass spectra
%K oxygen contamination<br>甚高频等离子体增强化学气相沉积，二次离子质谱，氧污染
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A4A5E0302A95EF86&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=E158A972A605785F&sid=7470465163F1C176&eid=A75E3615CCFA3AD1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=7