%0 Journal Article
%T A new method to grow high quality GaN film by MOCVD<br>一种外延生长高质量GaN薄膜的新方法
%A Peng Dong-Sheng
%A Feng Yu-Chun
%A Wang Wen-Xin
%A Liu Xiao-Feng
%A Shi Wei
%A Niu Han-Ben
%A <br>彭冬生
%A 冯玉春
%A 王文欣
%A 刘晓峰
%A 施 炜
%A 牛憨笨
%J 物理学报
%D 2006
%I 
%X Patterned c-plane sapphire substrate is prepared by chemical etching. GaN films are grown by LP-MOCVD on surface treated sapphire substrate and common c-plane sapphire substrate. The structure and properties of the GaN films are analyzed by high-resolution double crystal X-ray diffraction(DCXRD), scanning electron microscope(SEM) and atomic force microscope(AFM).The results indicate that the quality of GaN film grown on sapphire substrate prepared by surface treatment is superior to that grown on common c-plane sapphire substrate. High-resolution double crystal X-ray diffraction shows that for the GaN grown on surface treated sapphire substrate,the (0002) and (1012) reflections have full-width at half-maximum as low as 208.80arcsec and 320.76 acrsec, respectively. The shortcomings of procedure complexity and high crystallographic tilt in conventional lateral epitaxial overgrowth are overcome by using the new method.
%K MOCVD<br>表面处理
%K 横向外延生长
%K GaN薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E1B4A65962AE59F4&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=DF92D298D3FF1E6E&sid=D2F5521E765373D9&eid=6451941DD72CEE30&journal_id=1000-3290&journal_name=物理学报&referenced_num=5&reference_num=8