%0 Journal Article
%T Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi<br>高温快速退火对重掺锑硅单晶中流动图形缺陷的影响
%A Hao Qiu-Yan
%A Liu Cai-Chi
%A Sun Wei-Zhong
%A Zhang Jian-Qiang
%A Sun Shi-Long
%A Zhao Li-Wei
%A Zhang Jian-Feng
%A Zhou Qi-Gang
%A Wang Jing
%A <br>郝秋艳
%A 刘彩池
%A 孙卫忠
%A 张建强
%A 孙世龙
%A 赵丽伟
%A 张建峰
%A 周旗钢
%A 王 敬
%J 物理学报
%D 2005
%I 
%X Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-dop ed silicon wafers was investigated. The experimental results show that the dens ity of FPDs can be reduced after high temperature annealing, and H2 is the most effective annealing atmosphere. The mechanism of elimination of FPDs is also discussed from the relationship between heavily doping Sb and interstit ial oxygen concentration. The heavily doping Sb influences not only the distribu tion of initial oxygen concentration in CZSi wafer, but also the formation and h eat behavior of grown-in void defects.
%K heavily Sb-doped silicon
%K rapid thermal annealing (RTA)
%K flow pattern defects (FPDs)
%K void defect<br>重掺锑硅单晶，快速退火（RTA），流动图形缺陷（FPDs），空洞缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=C603209949296278&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=F3090AE9B60B7ED1&sid=67C1A659302CF7D2&eid=BDB56DCB5DBEB158&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10