%0 Journal Article
%T A new method to evaluate reliability in GaAs PHEMT''s<br>一种新的GaAs PHEMT器件可靠性评估方法研究
%A Liu Hong-Xi
%A Zheng Xue-Feng
%A Han Xiao-Liang
%A Hao Yue
%A Z hang Mian
%A <br>刘红侠
%A 郑雪峰
%A 韩晓亮
%A 郝跃
%A 张绵
%J 物理学报
%D 2003
%I 
%X This paper analyzes the degradation in GaAs pseudomorphic high electron mobitity transistors (PHEMT's) by measuring the electric characteristics in GaAs PHEMT's before and after stress. The relation between impact ionization rate and maximu m channel electric field is gained. An analytical expression of impact ionizatio n rate versus maximum channel electric field is deduced by fitting the experimen tal results. The electric characteristic and reliability in GaAs PHEMT's can be improved and evaluated using the analytical expression. The impact ionization in channel should be decreased in order to improve the breakdown voltage in GaAs P HEMT's.
%K high electron mobility transistor
%K impact ionization rate
%K evaluation of reliability<br>高电子迁移率晶体管
%K 碰撞电离率，
%K 可靠性评估
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=98E4CDF93984F4F5&yid=D43C4A19B2EE3C0A&vid=286FB2D22CF8D013&iid=F3090AE9B60B7ED1&sid=943A5E0AB1B46CE9&eid=84C883A28CC091D6&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=11