%0 Journal Article
%T Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface<br>邻晶面外延生长机制的动力学Monte Carlo模拟
%A Mao Hui-Bing
%A Jing Wei-Ping
%A Yu Jian-Guo
%A Wang Ji-Qing
%A Wang Li
%A Dai Ning
%A <br>茅惠兵
%A 景为平
%A 俞建国
%A 王基庆
%A 王力
%A 戴宁
%J 物理学报
%D 2006
%I 
%X In this paper the epitaxial growth mechanism on vicinal GaAs(001) surface is studied using the kinetic Monte Carlo simulation method. The Ehrlich-Schwoebel barrier has great influence on the growth mechanism of the vicinal surface. The simulation results show that the downward movement to a lower step of the adatoms can be inhibited by Ehrlich-Schwoebel barrier at low temperature, while the adatoms can move to the lower step at high temperature. At the beginning of growth, the adatoms are almost distributed uniformly on the steps. When the surface coverage reaches to certain value, the step nucleation begins. Meanwhile, the adatoms begin to accumulate at the upper step because of the Ehrlich-Schwoebel barrier. If there were no Ehrlich-Schwoebel barrier, the adatoms at the upper step could be depleted completely. The Ehrlich-Schwoebel barrier has great influence on the growth mode of the vicinal surface, and it will increase the temperature for onset of the step growth mode.
%K Epitaxial growth mechanism
%K Kinetic Monte Carlo
%K Ehrlich-Schwoebel barrier<br>外延生长模式
%K 动力学Monte
%K Carlo
%K Ehrlich-Schwoebel势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=97FD54187DBD756D&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=F3090AE9B60B7ED1&sid=62F95BA07E66CDD3&eid=3F0B03FF2A66502E&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=21