%0 Journal Article
%T Junction capacitance models of SiGe HBT<br>SiGe HBT势垒电容模型
%A 吕　懿
%A 张鹤鸣
%A 戴显英
%A 胡辉勇
%A 舒　斌
%J 物理学报
%D 2004
%I 
%X When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when considering of their junction capacitance. Based on the analysis and study of the carrier transport of SiGe HBT, emitter junction capacitance model is developed by considering the carrier distribution, and the collector junction capacitance model is also established for different current densities including base extending effect. The junction capacitance models are used to simulate frequency characteristics. The results of simulation show good agreements with the experimental data.
%K SiGe HBT
%K junction capacitance
%K differential capacitance<br>SiGeHBT
%K 势垒电容
%K 微分电容
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9ABE6ACDA94C66BA&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=9CF7A0430CBB2DFD&sid=C752758852E1E57D&eid=5F2FEFD7AAE27FB3&journal_id=1000-3290&journal_name=物理学报&referenced_num=4&reference_num=9