%0 Journal Article
%T Synchrotron radiation study on Au/GaN(0001) interface with low coverage<br>低覆盖度的Au/GaN(0001)界面的同步辐射研究
%A Zou Chong-Wen
%A Sun Bai
%A Wang Guo-Dong
%A Zhang Wen-Hu
%A Xu Peng-Shou
%A Pan Hai-Bin
%A Xu Fa-Qiang
%A Yin Zhi-Jun
%A Qiu Kai
%A <br>邹崇文
%A 孙 柏
%A 王国栋
%A 张文华
%A 徐彭寿
%A 潘海斌
%A 徐法强
%A 尹志军
%A 邱 凯
%J 物理学报
%D 2005
%I 
%X Synchrotron radiation photoemission spectroscopy (SRPES) is used to study the initial growth mode of the gold deposition on the surface of GaN, the Schottky barrier height (SBH) and the electronic structure at the interface of the Au/GaN(0001) system. The results show that at the initial stage chemical reaction exists between the Au and GaN substrate. Over the reaction layer, the growth mode of Au deposition is 3D island mode. The SBH is examined by the SRPES and the result is 1.4?eV, which is consistent with other experiment reports. Analyzing the energy shift of valence band and the Au core level, the interface chemical reaction is confirmed. The theoretical calculation by linear augmented plane wave method gives the density of states. According to the calculation results, the principle of the interface reaction is discussed.
%K synchrotron radiation
%K photoelectron spectroscopy
%K Au/GaN ohmic contact
%K density
%K of states<br>同步辐射
%K 光电子能谱
%K Au/GaN欧姆接触
%K 态密度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E6B11FCC47BD3751&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=5D311CA918CA9A03&sid=5130D05652FA6671&eid=5BAA7FEF9F14DABE&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=30