%0 Journal Article
%T A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons<br>CMOS器件60Co γ射线、电子和质子电离辐射损伤比较
%A He Bao-Ping
%A Chen Wei
%A Wang Gui-Zhen
%A <br>何宝平
%A 陈 伟
%A 王桂珍
%J 物理学报
%D 2006
%I 
%X The stopping power and accumulation energy for protons in SiO2 are calculated by using Monte Carlo software TRIM95. As a result, the ionizing stopping power and the nucleus stopping power are compared for protons in SiO2 , and the relation between absorption dose of material surface and factual absorption dose of sensitive area is discussed. CCA007RH and CC4011 devices were irradiated with Co-60 gamma rays, 1MeV electrons and 1-9MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. The result show that the radiation damages from Co-60 gamma rays, 1MeV electrons and 1-TMeV protons were equivalent for 0V gate bias conditions. Under 5V gate bias, the radiation damage for Co-60 gamma rays was most serious. The distinction in damage between 1MeV electrons and Co-60 gamma rays was not large. The damage from protons below 9MeV was always less than that from Co-60. The lower the proton energy, the less the damage.
%K gamma rays
%K electrons
%K protons
%K radiation damage<br>γ射线，
%K 电子，
%K 质子，
%K 辐射损伤
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3CCC78448F6B31D4&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=DF92D298D3FF1E6E&sid=124D87F7B620745F&eid=770E3C18E0551A73&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=7