%0 Journal Article
%T Experimental research of laser-induced damage mechanism of the sol-gel SiO2 and IBSD SiO2 thin films<br>单层SiO2物理膜与化学膜激光损伤机理的对比研究
%A 陈习权
%A 祖小涛
%A 郑万国
%A 蒋晓东
%A 吕海兵
%A 任 寰
%A 张艳珍
%A 刘春明
%J 物理学报
%D 2006
%I 
%X This paper investigates the high-power laser-induced damage of two types of single-layer SiO2 thin films on K9 substrate, which are respectively deposited by IBSD technique and sol-gel technique, and have the same substrate parameters and the same film thickness. They were tested by surface thermal lensing technique to obtain the thermal absorbance and the dynamic response. The results show that the laser-initiated damage threshold of Sol-Gel SiO2 thin film is far higher than that of IBSD SiO2 thin film. And combined with threshold measurement and the microscopic observation, this paper well explains in detail the threshold difference between Sol-Gel SiO2 and IBSD SiO2 thin films.
%K high-power laser radiation damage
%K damage morphologies
%K thermal shock
%K thermal absorbance<br>强激光辐照损伤，
%K 损伤形貌，
%K 热冲击，
%K 热吸收
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E7610F356B01D0E4&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=38B194292C032A66&sid=B4942BBE94415B36&eid=379827DA4720AA2A&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=20