%0 Journal Article
%T Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET<br>界面态电荷对6H碳化硅N沟MOSFET阈值电压和跨导的影响
%A Tang Xiao-Yan
%A Zhang Yi-Men
%A Zhang Yu-Ming
%A <br>汤晓燕
%A 张义门
%A 张玉明
%J 物理学报
%D 2002
%I 
%X The effect of interface state charges on the threshold voltage and transconductance of 6H SiC N channel metal oxide semiconductor field effact transistor (MOSFET) is analyzed based on the nonuniformly distributed interface state density in the band gap and incomplete impurity ionization in silicon carbide.The results show that the nonuniform distribution of interface state density causes not only the increment of the threshold voltage but also the degradation of the transconductance of MOSFET so that it is one of the important factors to influence the characteristics of SiC MOSFET.
%K silicon carbide
%K interface state
%K threshold voltage
%K transconductance<br>碳化硅
%K 界面态
%K 阈值电压
%K 跨导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=8BD0AB5C811D9BED&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=E158A972A605785F&sid=E3691231514F8E11&eid=FA519F4FF622280A&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=9