%0 Journal Article
%T STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET<br>新型槽栅PMOSFET热载流子退化机理与抗热载流子效应研究
%A REN HONG-XIA
%A HAO YUE
%A <br>任红霞
%A 郝 跃
%J 物理学报
%D 2000
%I 
%X In this paper,the hot-carrier mechanism in grooved-gate MOS is analyzed at first .It is found that the hot-carrier effect reaches its highest generate rate under medium gate bias voltage of the three stress areas.Then,the characteristics of hot-carrier-effect in grooved-gate and planar PMOSFET are simulated using advanc ed 2-dimensional device simulator.The results show that the hot-carrier generate d in grooved-gate PMOSFET is far less than in planar PMOSFET,especially for the case of channel length in deep-sub-micron and super deep-sub-micron region.In or der to investigate the other influences of hot-carrier-effect immunity on device characteristics,the drift of gate and drain characteristics induced by differen t interface state is studied for grooved-gate and planar devices.It shows that t he drift induced by same interface state in grooved-gate MOSFET is far larger th an in planar device.This work lays a foundation for the research and design of n ovel very-small-size grooved gate CMOS devices.
%K grooved-gate PMOSFET
%K mechanism of hot-carrier-degradation
%K hot-carrier-effect<br>槽栅PMOSFET，
%K 热载流子退化机理，
%K 热载流子效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=47CCBE99C69FAD7D8AD403E399400A9B&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=9CF7A0430CBB2DFD&sid=E652F68A3FDC0E89&eid=57133673016E56C3&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=4