%0 Journal Article
%T Study on the cell structure in semi-insulation gallium arsenide<br>用x射线形貌研究半绝缘砷化镓单晶胞状结构
%A Xu Yue-Sheng
%A Tang Lei
%A Wang Hai-Yun
%A Liu Cai-Chi
%A Hao Jing-Chen
%A <br>徐岳生
%A 唐　蕾
%A 王海云
%A 刘彩池
%A 郝景臣
%J 物理学报
%D 2004
%I 
%X Defects constructing a netlike cell structure in the 3-inch semi-insulating gallium arsenide (SI-GaAs) single crystal were studied by methods of chemical etching, x-ray anomalous transmission topography (XRT) and transmission electron microscope (TEM). The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are made by the clusters of small angle grain boundary caused by the movement and interaction of high density of dislocations. and the cell wall is the typical small angle grain boundary. The phase difference among the small angle grain boundaries increases with the density of dislocations.
%K semi-insulation gallium arsenide
%K small angle grain boundary
%K cell structure<br>SI-GaAs，
%K 小角度晶界，
%K 胞状结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=05947F94F0F2DD0F&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=0B39A22176CE99FB&sid=7004BE6E41AAF52C&eid=04FC77FB58A9B53A&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=5