%0 Journal Article %T Computer simulation of ultra-thin crystal film growth
超薄晶体膜生长过程的计算机模拟 %A Wang Pei-Lin %A Ding Tian-Hua %A Cai Xun %A
王培林 %A 丁天骅 %A 蔡珣 %J 物理学报 %D 2002 %I %X A new model is proposed to simulate the whole process of ultra thin crystal film growth.The concepts of reseau and seize section are introduced to treat the complex relationship among atoms.The effects of diffusion,substrate temperature,etc.,on the growth of the Ge/Si ultra thin crystal film are studied. %K crystal film %K model %K simulation
晶体膜 %K 模型 %K 模拟 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CC0B5C77E053BCF6&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=9CF7A0430CBB2DFD&sid=937C40E5E983B5E8&eid=7058971B95CBEC94&journal_id=1000-3290&journal_name=物理学报&referenced_num=6&reference_num=9