%0 Journal Article
%T NOVEL COUPLED MULTI-ACTIVE REGION HIGH POWER SEMICONDUCTOR LASERS CASCADED VIA T UNNEL JUNCTION<br>新型多有源区隧道再生光耦合大功率半导体激光器
%A LIAN PENG
%A YIN TAO
%A GAO GUO
%A ZOU DE-SHU
%A CHEN CHANG-HUA
%A LI JIAN-JUN
%A SHEN GUANG-DI
%A MA XIAO-YU
%A CHEN LIANG-HUI
%A <br>廉鹏
%A 殷涛
%A 高国
%A 邹德恕
%A 陈昌华
%A 李建军
%A 沈光地
%A 马骁宇
%A 陈良惠
%J 物理学报
%D 2000
%I 
%X A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential q uantum efficiency as high as 2.2 and light power output of 2.5W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three a ctive regions.
%K semiconductor lasers
%K high power
%K MOCVD<br>半导体激光器，
%K 大功率，
%K 金属有机化合物气相沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=8C6151FBCCEB3D57&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=59906B3B2830C2C5&sid=A9EFBBF939E57466&eid=2322AFA7527B5E70&journal_id=1000-3290&journal_name=物理学报&referenced_num=12&reference_num=4