%0 Journal Article
%T Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET<br>界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响
%A Tang Xiao-Yan
%A Zhang Yi-Men
%A Zhang Yu-Ming
%A Gao Jin-Xia
%A <br>汤晓燕
%A 张义门
%A 张玉明
%A 郜锦侠
%J 物理学报
%D 2003
%I 
%X The effect of interface state charges on the field-effect mobility of n-channel 6H-SiC MOSFET is analyzed based on the nonuniform distribution of interface state density in the energy gap. The results of the analysis show that interface state charges have the influence of lowering the field-effect mobility in n-channel SiC MOSFET. A relationship has been established between the ratio of the experimentally determined field-effect mobility to the inversion-layer carrier mobility and interface states.
%K silicon carbide
%K interface state
%K inversion-layer mobility
%K field-effect mobility<br>碳化硅，
%K 界面态，
%K 反型层迁移率，
%K 场效应迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=BE1FE6BA837DF1A2&yid=D43C4A19B2EE3C0A&vid=286FB2D22CF8D013&iid=E158A972A605785F&sid=CE16DE2ABCD4D365&eid=07034C6B9EA4A53C&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=11