%0 Journal Article
%T Electron transport properties of MM-HEMT with varied channel indium contents<br>变In组分沟道的MM-HEMT材料电子输运特性研究
%A Qiu Zhi-Jun
%A Jiang Chun-Ping
%A Gui Yong-Sheng
%A Shu Xiao-Zhou
%A Guo Shao-Ling
%A Chu Jun-Hao
%A Cui Li-Jie
%A Zeng Yi-Ping
%A Zhu Zhan-Ping
%A Wang Bao-Qiang
%A <br>仇志军
%A 蒋春萍
%A 桂永胜
%A 疏小舟
%A 郭少令
%A 褚君浩
%A 崔利杰
%A 曾一平
%A 朱战平
%A 王保强
%J 物理学报
%D 2003
%I 
%X Transport properties of two_dimensional electron gas (2DEG) are crucial to metamorphic high_electron_mobility transistors (MM_HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov_de Hass oscillations and variable temperature Hall measurements. The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM_HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.
%K MM_HEMT
%K Shubnikov_de Hass oscillation<br>变缓冲层高迁移率晶体管，Shubnikov_de
%K Hass
%K 振荡
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B67C7967C13E5DB0&yid=D43C4A19B2EE3C0A&vid=286FB2D22CF8D013&iid=708DD6B15D2464E8&sid=056F689C0D4C15AF&eid=9DA3D7FB2D9A6691&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14