%0 Journal Article
%T STUDY ON PARAMETER CHARACTERIZATION OF THIN GATE OXIDE TDDB BREAKDOWN<br>薄栅氧化层经时击穿的参数表征研究
%A LIU HONG-XIA
%A HAO YUE
%A <br>刘红侠
%A 郝跃
%J 物理学报
%D 2000
%I 
%X Breakdown characteristics of the thin gate oxide are measured under constant voltage stresses. Breakdown mechanism of time-dependent dielectric breakdown are studied and effects of the areas of the gate oxide on breakdown characteristics are discussed. Breakdown charge QBD is measured and analyzed, the results show that breakdown charge QBD is not constant, it depends on the areas of the gate oxide and the voltage of the gate. Relative coefficients are fitted and analytical expression of QBD is presented in the paper.
%K 超大规模集成电路
%K 薄栅氧化层
%K 击穿
%K 参数表征
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=DD230D6320A5DB9D&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=B31275AF3241DB2D&sid=4E3541241257D204&eid=9905045FEE51B18F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=5