%0 Journal Article
%T ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES<br>ZnSe/GaAs(100)界面电子结构的计算
%A YANG SHI-E
%A MA BING-XIAN
%A JIA YU
%A SHEN SAN-GUO
%A FAN XI-QING
%A <br>杨仕娥
%A 马丙现
%A 贾 瑜
%A 申三国
%A 范希庆
%J 物理学报
%D 1998
%I 
%X We present results of a theoretical calculation of the electronic structure of the two polar ZnSe/GaAs(100) interfaces. The bulk electronic structure is described by the nearest neighbor tight binding formalism. Using the scattering theoretical method, we have obtained wave vector-resolved interface layer densities of states and the interface band structure. For both Se/Ga and As/Zn interfaces, there exist no interface states in the fundamental gap, but there are three interface bands and four semi-resonance bands in the valence-band region. Finally, we study the nature and origins of these bands by analysing orbital-resolved layer densities of states.
%K 散射理论
%K 密度
%K 砷化镓
%K 硒化镓
%K 界面
%K 电子结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=478BD5F0F36565A686EEB7FDB6AE0627&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=F3090AE9B60B7ED1&sid=030782B6ACCD7BEA&eid=457F754A679A9D25&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=6