%0 Journal Article
%T NEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION<br>金属-绝缘体-半导体(Au-SiO2-Si)隧道结的负阻现象与发光特性
%A WANG MAO-XIANG
%A YU JIAN-HUA
%A SUN CHENG-XIU
%A WU ZONG-HAN
%A <br>王茂祥
%A 俞建华
%A 孙承休
%A 吴宗汉
%J 物理学报
%D 2000
%I 
%X The Au-SiO2-Si thin film MIS(Metal-Insulator-Semiconductor)tunnel junction was fabricated.The light emission property and I-V characteristic of this junction were measured and analyzed.Result indicated that the light emission was due to the excitation of Surface Plasmon Polariton(SPP)and the couple of SPP with the surface roughness subsequently in the MIS system.We observed the negative resistance phenomenon(NRP) in the I-V curve of this MIS junction,which was explained by the electrons bonding model. We also got the AFM(atomic force microscopy)photo of the surface of MIS junction, by which the relation among the electrons tunneling, the excitation of SPP,and the light emission of the MIS junction was discussed.
%K 金属－绝缘体－半导体
%K 隧道结
%K 负阻现象
%K 发光器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E6EA2317CE2CC2A1&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=B31275AF3241DB2D&sid=545EC3172B3789BC&eid=38C4598EB9061892&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=3