%0 Journal Article
%T MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS<br>C-BN电子输运特性的Monte Carlo模拟
%A YU LI-JUAN
%A ZHU CHANG-CHUN
%A <br>于丽娟
%A 朱长纯
%J 物理学报
%D 2000
%I 
%X In the paper, according to the energy-band structure of C-BN and specific characteristics of polar semiconductor, the main scattering mechanism of C-BN is built, and the physical model applicable to Monte Carlo(MC) simulation is set up. It is the first time that the stable-state electronics transport characteristics of bulk C-BN is simulated by single electronics MC method. The variation laws of mean drift velocity, mobility as well as electronic energy with electrical field are obtained respectively. Also, the variation laws of electronic energy relaxation time and momentum relaxation time with electrical field are obtained respectively.
%K 立方氮化硼
%K 蒙特卡罗模拟
%K C－BN
%K 电子输运特征
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E144F847C99C903A&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=B31275AF3241DB2D&sid=D5BEB939E141E547&eid=A3A7F1D1E8071003&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=1