%0 Journal Article
%T CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR<br>硅量子点中电子的荷电动力学特征
%A YUAN XIAO-LI
%A SHI YI
%A YANG HONG-GUAN
%A BU HUI-MING
%A WU JUN
%A ZHAO BO
%A ZHANG RONG
%A ZHENG YOU-DOU
%A <br>袁晓利
%A 施 毅
%A 杨红官
%A 卜惠明
%A 吴 军
%A 赵 波
%A 张 荣
%A 郑有钭
%J 物理学报
%D 2000
%I 
%X Using frequency-dependent capacitance spectroscopy, we investigate the charging dynamics of silicon quantum dots embedded in oxide matrix through a SiO2/Si-quantum dots/SiO2/Si-substrate tunnel capacitor. Two resonance peaks both for capacitance and conductance in the inversion region are observed at room temperature, being attributed to the direct tunneling between the condu ctance band ofSi-substrate and the one-and two-electron ground-state level of th e Si quantum dot. The Coulomb charging energy of the dots is extracted from the experimental results.
%K Quantum dot
%K Capacitance-voltage measurement
%K Coulomb charging energy
%K Direct tu nneling<br>量子点，电容谱，库仑荷电能，直接隧穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A4B73385B7DD0017&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=F3090AE9B60B7ED1&sid=59C77779BF483289&eid=2D8A2D26AFF207D2&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=6