%0 Journal Article
%T SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE<br>高温下金属薄膜生长初期的模拟研究
%A WU FENG-MIN
%A SHI JIAN-QING
%A WU ZI-QIN
%A <br>吴锋民
%A 施建青
%A 吴自勤
%J 物理学报
%D 2001
%I 
%X The atomic processes of nucleation and initial growth of thin films on metal surfaces are simulated by Monte Carlo method,using realistic growth model-Fe on Fe (001) surface and physical parameters.By taking into account the physical processes involved in film growth,such as deposition,diffusion,nucleation,growth,evaporation,edge diffusion and coalescence,the morphology and quantitative characteristies of thin film growth are obtained.The details of thin film growth at high substrate temperatures,such as the change of island density and growth rate with temperature and coverage,are obtained by making statistical counting during the growth processes,which are difficult to access directly in real experiments.
%K thin film
%K Monte Carlo simulation
%K nucleation
%K island density
%K growth rate of thin film<br>薄膜
%K Monte
%K Carlo模拟
%K 成核
%K 岛密度
%K 薄膜生长率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F0EA804A3E3211F7&yid=14E7EF987E4155E6&vid=771152D1ADC1C0EB&iid=5D311CA918CA9A03&sid=43797DD45B2BF7AC&eid=9B1BEE8CA21457F1&journal_id=1000-3290&journal_name=物理学报&referenced_num=5&reference_num=26