%0 Journal Article
%T XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE<br>分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究
%A YUAN JIN-SHE
%A CHEN GUANG-DE
%A QI MING
%A LI AI-ZHEN
%A XU ZHUO
%A <br>苑进社
%A 陈光德
%A 齐鸣
%A 李爱珍
%A 徐卓
%J 物理学报
%D 2001
%I 
%X The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequently, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.
%K GaN film
%K XPS
%K AES
%K surface analysis<br>GaN薄膜
%K X射线光电子能谱
%K 俄歇电子能谱
%K 表面分析
%K 分子束外延
%K 氮化镓
%K 半导体材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=91F01B65599FFCB9&yid=14E7EF987E4155E6&vid=771152D1ADC1C0EB&iid=59906B3B2830C2C5&sid=99E312E13904482F&eid=A7071151A963A1BF&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=22